PROJEKTI
   

Project
Acronym:  
Name: A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration – TMAH Etching Optimization 
Project status: From: 2009-12-11 To: 2010-04-10 (Completed)
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Type (Programme): INDUSTRY 
Instrument:  
Project cost: -
Project funding: -
Project coordinator
Organisation Name: Asahi Kasei EMD Co., Ltd.  
Organisation adress: 1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 
Organisation country: Japan 
Contact person name:  
Contact person email:  
Croatian partner
Organisation name: Fakultet elektrotehnike i računarstva 
Organisation address:  
Contact person name: Tomislav Suligoj
Contact person tel:
+385 1 6129898  Contact person fax: +385 1 6129653 
Contact person e-mail: Email 
Partners
Organisation nameCountry
Short description of project
The goal of the project is to optimuize emitter etching porcess as a critical step in the development of a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. A number of short-loop experiments should demonstrate etching uniformity, controllability and repeatability. 
Short description of the task performed by Croatian partner
Design of short-loop experiments for the emitter etching. Definition of critical etching parameters and the range of their variations. Impact of resulting etch profiles on transistor performance. Simulation of the impact of different emitter thickness and shape on the transistor characteristics. 


   

Design by: M. Mačinković

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