| Project |
| Acronym: |
|
| Name: |
Layout design of test structures for integrated detectors
|
| Project status: |
From: 2009-09-01
To: 2010-09-01
(Completed)
|
| Type (Programme): |
BILAT |
| Project funding: |
- |
| International partner |
| Organisation Name: |
Delft University of Technology |
| Organisation adress: |
Feldmannweg 17, 2628 CT Delft |
| Organisation country: |
Nizozemska |
| Contact person name: |
|
| Contact person email: |
|
| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
ZEMRIS, Unska 3, 10000 Zagreb |
| Contact person name: |
Tomislav Suligoj
|
| Contact person tel: |
| +385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
|
| Contact person e-mail: |
Email |
| Short description of project |
| Due to the scaling of photolithography used in semiconductor technology, the wavelength of light used as a source for the expoure systems has been reduced into the Deep Ultra Violet (DUV) and Extreme Ultra Violet (EUV) range. Since the penetration of light of these wavelengths is in nanometer range in silicon, special photodetector structure with ultra-shallow junction has to be developed and optmimized. |
| Short description of the task performed by Croatian partner |
| Simulation of photodetector response on DUV and EUV light. Optimization of photodetector structure for the maximum sensitivity and speed. Determination of optimum layout of photodetectors. |
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