| Project |
| Acronym: |
|
| Name: |
A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration – Device and Circuit Optimization
|
| Project status: |
From: 2008-12-11
To: 2009-12-10
(Completed)
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| Contract number: |
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| Action line: |
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| Type (Programme): |
INDUSTRY |
| Instrument: |
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| Project cost: |
- |
| Project funding: |
- |
| Project coordinator |
| Organisation Name: |
Asahi Kasei EMD Co., Ltd. |
| Organisation adress: |
1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 |
| Organisation country: |
Japan |
| Contact person name: |
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| Contact person email: |
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| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
ZEMRIS, Unska 3, 10000 Zagreb |
| Contact person name: |
Tomislav Suligoj
|
| Contact person tel: |
| +385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
|
| Contact person e-mail: |
Email |
| Partners |
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| Short description of project |
| The goal of the project is to develop a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process and to optimize its electrical characteristics. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. HCBT optimization for the wireless communication circuits must be carried our with respect to noise, linearity and power consumption. |
| Short description of the task performed by Croatian partner |
| Design of the the novel Horizontal Current Bipolar Transistor (HCBT) Technology and integration with 0.18um CMOS process. Process and device simulation. Data interpretation and modeling. Design of demonstration circuits using HCBT, such as Emitter Coupled Logic (ECL) ring oscillators. Characterization and measurments of ECL circuits. |
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