Project |
Acronym: |
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Name: |
A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration – TMAH Etching Optimization
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Project status: |
From: 2009-12-11
To: 2010-04-10
(Completed)
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Contract number: |
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Action line: |
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Type (Programme): |
INDUSTRY |
Instrument: |
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Project cost: |
- |
Project funding: |
- |
Project coordinator |
Organisation Name: |
Asahi Kasei EMD Co., Ltd. |
Organisation adress: |
1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 |
Organisation country: |
Japan |
Contact person name: |
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Contact person email: |
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Croatian partner |
Organisation name: |
Fakultet elektrotehnike i računarstva |
Organisation address: |
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Contact person name: |
Tomislav Suligoj
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Contact person tel: |
+385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
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Contact person e-mail: |
Email |
Partners |
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Short description of project |
The goal of the project is to optimuize emitter etching porcess as a critical step in the development of a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. A number of short-loop experiments should demonstrate etching uniformity, controllability and repeatability. |
Short description of the task performed by Croatian partner |
Design of short-loop experiments for the emitter etching. Definition of critical etching parameters and the range of their variations. Impact of resulting etch profiles on transistor performance. Simulation of the impact of different emitter thickness and shape on the transistor characteristics. |